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| VN2210 N-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information BVDSS / BVDGS 100V RDS(ON) (max) 0.35 ID(ON) (min) 8A Order Number / Package TO-39 VN2210N2 TO-92 VN2210N3 MIL visual screening available Features Free from secondary breakdown Low power drive requirement Ease of paralleling Low CISS and fast switching speeds Excellent thermal stability Integral Source-Drain diode High input impedance and high gain Complementary N- and P-channel devices Advanced DMOS Technology These enhancement-mode (normally-off) transistors utilize a vertical DMOS structure and Supertex's well-proven silicon-gate manufacturing process. This combination produces devices with the power handling capabilities of bipolar transistors and with the high input impedance and positive temperature coefficient inherent in MOS devices. Characteristic of all MOS structures, these devices are free from thermal runaway and thermallyinduced secondary breakdown. Supertex's vertical DMOS FETs are ideally suited to a wide range of switching and amplifying applications where high breakdown voltage, high input impedance, low input capacitance, and fast switching speeds are desired. Applications Motor controls Converters Amplifiers Switches Power supply circuits Drivers (relays, hammers, solenoids, lamps, memories, displays, bipolar transistors, etc.) Package Options Absolute Maximum Ratings Drain-to-Source Voltage Drain-to-Gate Voltage Gate-to-Source Voltage Operating and Storage Temperature Soldering Temperature* * Distance of 1.6 mm from case for 10 seconds. Note: See Package Outline section for dimensions. BVDSS BVDGS 20V -55C to +150C 300C DGS TO-39 Case: DRAIN SGD TO-92 07/08/02 Supertex Inc. does not recommend the use of its products in life support applications and will not knowingly sell its products for use in such applications unless it receives an adequate "products liability indemnification insurance agreement." Supertex does not assume responsibility for use of devices described and limits its liability to the replacement of devices determined to be defective due to workmanship. No responsibility is assumed for possible omissions or inaccuracies. Circuitry and specifications are subject to change without notice. For the latest product specifications, refer to the Supertex website: http://www.supertex.com. For complete liability information on all Supertex products, refer to the most current databook or to the Legal/Disclaimer page on the Supertex website. 1 VN2210 Thermal Characteristics Package TO-92 TO-39 ID (continuous)* 1.2A 1.7A ID (pulsed) 8.0A 10.0A Power Dissipation @ TC = 25C 1.0W 6.0W jc ja IDR* 1.2A 1.7A IDRM 8.0A 10.0A C/W 125 21 C/W 170 125 * ID (continuous) is limited by max rated Tj. Electrical Characteristics (@ 25C unless otherwise specified) Symbol BVDSS VGS(th) V GS(th) IGSS IDSS Parameter Drain-to-Source Breakdown Voltage Gate Threshold Voltage Change in VGS(th) with Temperature Gate Body Leakage Zero Gate Voltage Drain Current Min 100 0.8 -4.3 1 2.4 -5.5 100 50 10 ID(ON) RDS(ON) RDS(ON) GFS CISS COSS CRSS td(ON) tr td(OFF) tf VSD trr Notes: 1. All D.C. parameters 100% tested at 25C unless otherwise stated. (Pulse test: 300s pulse, 2% duty cycle.) 2. All A.C. parameters sample tested. Typ Max Unit V V mV/C nA A mA Conditions VGS = 0V, ID = 10mA VGS = VDS, ID = 10mA VGS = VDS, ID = 10mA VGS = 20V, VDS = 0V VGS = 0V, VDS = Max Rating VGS = 0V, VDS = 0.8 Max Rating TA = 125C VGS = 5V, VDS = 25V VGS = 10V, VDS = 25V VGS = 5V, ID = 1A VGS = 10V, ID = 4A VGS = 10V, ID = 4A VDS = 25V, ID = 2A VGS = 0V, VDS = 25V f = 1 MHz ON-State Drain Current 3 8 4.5 17 0.4 0.27 0.85 0.5 0.35 1.2 %/C A Static Drain-to-Source ON-State Resistance Change in RDS(ON) with Temperature Forward Transconductance Input Capacitance Common Source Output Capacitance Reverse Transfer Capacitance Turn-ON Delay Time Rise Time Turn-OFF Delay Time Fall Time Diode Forward Voltage Drop Reverse Recovery Time 1.2 300 125 50 10 10 50 30 1.0 500 500 200 65 15 15 65 50 1.6 V ns VGS = 0V, ISD = 4A VGS = 0V, ISD = 1A ns VDD = 25V ID = 2A RGEN = 10 pF Switching Waveforms and Test Circuit 10V 90% INPUT 0V PULSE GENERATOR Rgen 10% t(ON) t(OFF) tr td(OFF) tF td(ON) VDD 10% 10% INPUT OUTPUT 0V 90% 90% 2 VDD RL OUTPUT D.U.T. VN2210 Typical Performance Curves Output Characteristics 20 20 Saturation Characteristics VGS = 10V 16 VGS = 10V 16 8V ID (amperes) 12 ID (amperes) 8V 12 8 6V 8 6V 4 4 4V 3V 0 0 10 20 30 40 50 0 0 2 4 6 8 4V 3V 10 VDS (volts) Transconductance vs. Drain Current 4.0 10 VDS (volts) Power Dissipation vs. Case Temperature 3.2 VDS = 25V 8 GFS (siemens) 25C 1.6 PD (watts) 2.4 TA = -55C 6 TO-39 4 150C 0.8 2 TO-92 0 0 0.8 1.6 2.4 3.2 4.0 0 0 25 50 75 100 125 150 ID (amperes) Maximum Rated Safe Operating Area 10 1.0 TO-39 (pulsed) TO-92 (pulsed) TO-39 (DC) 1 TO-92 (DC) TC (C) Thermal Response Characteristics Thermal Resistance (normalized) 0.8 ID (amperes) 0.6 0.4 0.1 0.2 0.01 0.1 TC = 25C 1 10 100 0 0.001 0.01 0.1 TO-92 TC = 25C PD = 1W 1 10 VDS (volts) tP (seconds) 3 VN2210 Typical Performance Curves BVDSS Variation with Temperature 1.0 1.1 0.8 On-Resistance vs. Drain Current V GS = 5V BVDSS (normalized) RDS(ON) (ohms) 0.6 VGS = 10V 1.0 0.4 0.2 0.9 0 -50 0 50 100 150 0 4 8 12 16 20 Tj (C) Transfer Characteristics 10 ID (amperes) VGS(th) and R DS(ON) Variation with Temperature 1.2 2.0 1.1 VDS = 25V 8 RDS(ON) @ 10V, 4A 1.6 ID (amperes) 6 TA = -55C 25C 1.0 1.2 0.9 0.8 0.8 4 150C 2 VGS(th) @ 10mA 0.4 0 0 2 4 6 8 10 0.7 -50 0 50 100 150 VGS (volts) Capacitance vs. Drain-to-Source Voltage 500 10 Tj (C) Gate Drive Dynamic Characteristics f = 1MHz 8 375 VDS = 10V C (picofarads) VGS (volts) CISS 250 6 900 pF 4 125 COSS 2 VDS = 40V CRSS 0 0 10 20 30 40 0 0 300 pF 2 4 6 8 10 VDS (volts) QG (nanocoulombs) 07/08/02 (c)2002 Supertex Inc. All rights reserved. Unauthorized use or reproduction prohibited. 4 1235 Bordeaux Drive, Sunnyvale, CA 94089 TEL: (408) 744-0100 * FAX: (408) 222-4895 www.supertex.com RDS(ON) (normalized) VGS(th) (normalized) |
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